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Silicon Carbide (SiC) wafer

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in Wafer Scale Epitaxial Graphene on SiC(0001) | Request PDF

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Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer

Single-crystal silicon carbide (SiC) thin-films on silicon (Si) were conductive distributed Bragg reflectors (DBRs) on 100 mm Si wafers

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during CMP Process on 4H-SiC Wafer Using Electron Microscopy

The dislocation analysis of latent scratch induced chemical mechanical polishing process on 4H-silicon carbide (SiC) using the multi directional scanning

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Epitaxy Equipment Applications | CoorsTek

Wafer carriers used in epitaxial growth processing must endure high temperaturesTheir high-purity silicon carbide (SiC) coated graphite construction provid

METHOD FOR PRODUCING SIC EPITAXIAL WAFER AND APPARATUS FOR

A method for producing a SiC epitaxial wafer using an apparatus including a mounting plate having a recessed accommodation portion and a satellite disposed

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| Hitachi High Technologies Corporation, Tokyo and other

Masaki Hasegawas 5 research works with 4 citations and 24 reads, including: Observation of a Latent Scratch on Chemo-Mechanical Polished 4H-SiC Wafer

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| Growth and Self-Assembly of Silicon–Silicon Carbide

This work describes the growth of silicon–silicon carbide nanoparticles (Si–SiC) and their self-assembly into worm-like 1D hybrid nanostructures

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METHOD FOR PRODUCING SIC EPITAXIAL WAFER - SHOWA DENKO K.K.

This method of producing a SiC epitaxial wafer having an epitaxial layer on a SiC single crystal substrate, and includes: when performing crystal growth