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The hybrid well region may include an implanted p-type silicon carbide welldrift region, allowing electrons to flow from source regions to drain

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flow at the turn-on potential for the junction production of chemical species which are toxic orsilicon carbide junction isolation electrode devices

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(random), platelets, whiskers or fibres by in situ production of SiC originated from the conversion of lamp black carbon into silicon carbide

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@ improved granular abrasive material (22) comprises silicon carbide particles (23) at least partially coated with an integral, durable surface layer (24)

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A silicon carbide device is fabricated by forming a plurality of a same type of silicon carbide devices on at least a portion of a silicon carbide

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