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The hybrid well region may include an implanted p-type silicon carbide welldrift region, allowing electrons to flow from source regions to drain
flow at the turn-on potential for the junction production of chemical species which are toxic orsilicon carbide junction isolation electrode devices
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(random), platelets, whiskers or fibres by in situ production of SiC originated from the conversion of lamp black carbon into silicon carbide
@ improved granular abrasive material (22) comprises silicon carbide particles (23) at least partially coated with an integral, durable surface layer (24)
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View details Buy Buyer Protection Money BackMatetial: Rubber + silicon carbideUsage: ElectricBlack:180GritGreen:240GritBrown:320GritPink:400
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Pulsed CO_2-laser-induced decomposition of different mixtures of SiH_4 and C_2H_2 in a flow reactor has been employed to produce silicon carbide
A silicon carbide device is fabricated by forming a plurality of a same type of silicon carbide devices on at least a portion of a silicon carbide
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ABSTRACT OF THE DISCLOSURE A particulate mixture of .beta. -silicon carbide, boron carbide and a carbonaceous additive is formed into a green body and
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