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pBasal plane slip is the most frequently observed deformation mechanism in 4H-type silicon carbon (4H-SiC) single crystals grown by the physical
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2013412-Growth of SiC by PVT method with different sources of the cerium impurity, because there is a lack of data in the literature, concerning
(PVT) is the most common sublimation technique used for SiC crystal growth[0068] Technical advantages of the above-described method and apparatus
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While vapor growth of SiC is the standard technique today (section PVT The reliability of this calculated data, however, strikingly depends on the
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The effect of the presence of CeO2 in the source material on the properties of SiC crystals grown by Physical Vapor Transport (PVT) method is
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2012225- controlling the SiC sublimation growth by PVT growth is carried out under a small Technical advantages of the above-described metho
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pSynchrotron white beam x-ray topography studies carried out on 4H-SiC wafers characterized by locally varying doping concentrations reveals the presence
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Lattice strain in 4H-SiC substrate wafers can have a deleterious effect on the performance of power electronic devices, especially under high-
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