USComponent.com - IGBT Distributor
Global IGBT distributor. Wide products line up fast delivery of IGBTs, IGBT modules Infineon International rectifier Ixys Mitsubishi Niec Power-one pow
Global IGBT distributor. Wide products line up fast delivery of IGBTs, IGBT modules Infineon International rectifier Ixys Mitsubishi Niec Power-one pow
2018226-Cree, Inc. announces it signed a strategic long-term agreement to produce and supply Wolfspeed silicon carbide (SiC) wafers to Infineon Tech
2019411- US-based GT Advanced Technologies recently opened a SiC crystal growth facility to meet the imminent silicon carbide market boom while Infi
Infineon banking on SiC diodesSPENCER CHIN
2019329-concomitant with the commercialization of the first SiC MOSFET products. and Infineon, and improving the stability when the device temper
Subscribe More Titles ContactsAdd to my Reading List Remove from my Reading List News Article Infineon: SiC Modules And MoreMonday 5th June 2017
Infineon Uses SiC to Make Power Schottky Diodes.(Brief Article)Dance, Brian《Semiconductor International》
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Cree, Inc. (Nasdaq: CREE) announced today that it has entered into a definitive agreement to
Infineon Technologies AG and Cree announced a strategic long-term supply agreement for the provision of silicon carbide (SiC) wafers, allowing Infineon to
Order today, ships today. IDW40G65C5BXKSA2 – Diode Silicon Carbide Schottky 650V 20A (DC) Through Hole PG-TO247-3 from Infineon Technologies
Infineon’s first 1200 V CoolSiC MOSFET and a half, Infineon Technologies AG has now extended its SiC technology, called CoolSiC, to high-voltage
Senior Manager Innovation Projects, Infineon Head of BiMOS RD, ABB Switzerland Ltd, parallelized SiC BJT Half-Bridge Modules and
Infineon Technologies AG has launched its second-generation Schottky diodes based on silicon carbide (SiC) technology at the Applied Power Electronics
Infineon to acquireWolfspeed Investor Presentation July 14, 2016 Table of Contents 1 Key facts 2 Copyright © Infineon Technologies AG 2016. All
Search for: Search for: Recent Legal News Submit News Feed Submit Website Add News to Your Site Home Antitrust Bankruptcy Biotech Busine
2019313- Unsubscribe from InfineonTechnologies? Cancel em>infineon.com/wirelesschar-----em>infineon.com/All Products:
Infineon Technologies (Germany), ST Microelectronics (Switzerland), Siemens AG (Germany), Mitsubishi Motors (Japan), Toshiba (Japan), Fairchild (
© (2006) Trans Tech Publications, Switzerland Online available since 2006/Oct/15 Structure of “star ” defect in 4H-SiC substrates and epilayers
“The new Generation 5 SiC diodes underlines Infineon’s goal to deliver products that offer customers the opportunity to get the highest efficiency out
SiC JFET from SiCED/Infineon have been extractedcascode are increased, the product of voltage anddegree from the ETH Zurich, Zurich, Switzerland,
At this year's PCIM Europe trade fair in Nuremberg, Infineon presents the first silicon carbide products for automotive applications. The CoolSiC
The product offering provides power stage solutions with highest efficiency Infineon‘s CoolSiC™ Schottky diodes ranging from 600V-1200V improve
Building on our extensive cellular infrastructure experience and expertise, Infineon introduces a new family of Gallium Nitride (GaN) on Silicon Carbide (SiC
Demonstration of Infineon SiC MOSFET module performance within a 100 kHz DC/ Switzerland 1 United Kingdom 4 USA 8 Total 124 Profile Views Before
Infineon’s energy efficient products including high and low voltage MOSFETs, SiC schottky barrier diodes, driver ICs, and more available at Digi-Key. B
IFNNY) introduced the new CoolSiC™ 1200V SiC JFET family, which strengthens Infineons market leadership in the SiC (Silicon Carbide) product
Copyright © FengYuan Metallurgical Materials Co., Ltd. | sitemap