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infineon sic products in switzerland

USComponent.com - IGBT Distributor

Global IGBT distributor. Wide products line up fast delivery of IGBTs, IGBT modules Infineon International rectifier Ixys Mitsubishi Niec Power-one pow

Carbide Wafer Supply Agreement with Infineon | Business Wire

2018226-Cree, Inc. announces it signed a strategic long-term agreement to produce and supply Wolfspeed silicon carbide (SiC) wafers to Infineon Tech

Rohm braves high voltage SiC markets - News

2019411- US-based GT Advanced Technologies recently opened a SiC crystal growth facility to meet the imminent silicon carbide market boom while Infi

Infineon banking on SiC diodes

Infineon banking on SiC diodesSPENCER CHIN

Power SiC Patent Landscape, 2019 - The SiC Power Device

2019329-concomitant with the commercialization of the first SiC MOSFET products. and Infineon, and improving the stability when the device temper

Infineon: SiC modules and more - News

Subscribe More Titles ContactsAdd to my Reading List Remove from my Reading List News Article Infineon: SiC Modules And MoreMonday 5th June 2017

Infineon Uses SiC to Make Power Schottky Diodes.(

Infineon Uses SiC to Make Power Schottky Diodes.(Brief Article)Dance, Brian《Semiconductor International》

Infineon to acquire Wolfspeed for $850 million | Chip Design

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Cree, Inc. (Nasdaq: CREE) announced today that it has entered into a definitive agreement to

Cree to supply Infineon with more SiC wafers | eeNews Power

Infineon Technologies AG and Cree announced a strategic long-term supply agreement for the provision of silicon carbide (SiC) wafers, allowing Infineon to

Infineon Technologies | Discrete Semiconductor Products |

Order today, ships today. IDW40G65C5BXKSA2 – Diode Silicon Carbide Schottky 650V 20A (DC) Through Hole PG-TO247-3 from Infineon Technologies

Infineon Discloses 1200 V SiC MOSFETs for Power Conversion |

Infineon’s first 1200 V CoolSiC MOSFET and a half, Infineon Technologies AG has now extended its SiC technology, called CoolSiC, to high-voltage

Abstracts listed by sessions

Senior Manager Innovation Projects, Infineon Head of BiMOS RD, ABB Switzerland Ltd, parallelized SiC BJT Half-Bridge Modules and

Infineon launches its second-gen Schottky diodes

Infineon Technologies AG has launched its second-generation Schottky diodes based on silicon carbide (SiC) technology at the Applied Power Electronics

Advantage of 5th Gen SiC diode for SMPS design-Infineon__

Infineon to acquireWolfspeed Investor Presentation July 14, 2016 Table of Contents 1 Key facts 2 Copyright © Infineon Technologies AG 2016. All

International Inc., Genesic Semiconductors Inc., Infineon

Search for: Search for: Recent Legal News Submit News Feed Submit Website Add News to Your Site Home Antitrust Bankruptcy Biotech Busine

charging solutions | Automotive and Industrial | Infineon

2019313- Unsubscribe from InfineonTechnologies? Cancel em>infineon.com/wirelesschar-----em>infineon.com/All Products:

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Infineon Technologies (Germany), ST Microelectronics (Switzerland), Siemens AG (Germany), Mitsubishi Motors (Japan), Toshiba (Japan), Fairchild (

- 21IC

© (2006) Trans Tech Publications, Switzerland Online available since 2006/Oct/15 Structure of “star ” defect in 4H-SiC substrates and epilayers

5th Generation 1200V thinQ! SiC Schottky diodes, Infineon

“The new Generation 5 SiC diodes underlines Infineon’s goal to deliver products that offer customers the opportunity to get the highest efficiency out

D /D -Control Methods for the SiC JFET/Si MOSFET Cascode

SiC JFET from SiCED/Infineon have been extractedcascode are increased, the product of voltage anddegree from the ETH Zurich, Zurich, Switzerland,

Infineon targets automotive markets with SiC technology |

At this year's PCIM Europe trade fair in Nuremberg, Infineon presents the first silicon carbide products for automotive applications. The CoolSiC

Power - Infineon Technologies

The product offering provides power stage solutions with highest efficiency Infineon‘s CoolSiC™ Schottky diodes ranging from 600V-1200V improve

SiC__

Building on our extensive cellular infrastructure experience and expertise, Infineon introduces a new family of Gallium Nitride (GaN) on Silicon Carbide (SiC

ISiCPEAW 2016 | Programme

Demonstration of Infineon SiC MOSFET module performance within a 100 kHz DC/ Switzerland 1 United Kingdom 4 USA 8 Total 124 Profile Views Before

Energy Efficiency for Switch Mode Power Supplies – Infineon

Infineon’s energy efficient products including high and low voltage MOSFETs, SiC schottky barrier diodes, driver ICs, and more available at Digi-Key. B

Infineon Releases Revolutionary CoolSiC™ 1200V SiC JFET

IFNNY) introduced the new CoolSiC™ 1200V SiC JFET family, which strengthens Infineon’s market leadership in the SiC (Silicon Carbide) product