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426u silicon carbide disc 3 china

US7705362B2 - Silicon carbide devices with hybrid well

being part of a semiconductor device which comprises three or more electrodesThe hybrid well region may include an implanted p-type silicon carbide well

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Effects of Vibratory Disc Milling Time on the Effects of Silicon Carbide (SiC) Reinforcement Ti–6.5Al–3.5Mo–1.5Zr–0.3Si titanium

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with iron(III) oxide and silicon carbide | Request PDF

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and finite element analysis of lightmass silicon carbide

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