
Automotive-grade Silicon Carbide diodes - STMicroelectronics
A super heat-resistant silicon carbide fiber has an oxygen content of less than 1.0% by weight. In a process for producing the super heat-resistant
A super heat-resistant silicon carbide fiber has an oxygen content of less than 1.0% by weight. In a process for producing the super heat-resistant
Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices are provided by successively etching a mask layer to
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Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices are provided by successively etching a mask layer to
Tsutomu Kaneko; Noriaki Miyakawa; Hayato Sone; Hiroyosi Yamazakia, 2001: The growth process and optical emission spectroscopy of amorphous silicon carbide
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The companys 403-nm laser is based on a silicon carbide (SiC) Nichia Chemical Industries of Anan, Japan, demonstrated a GaN diode laser
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O. S. Fatoba et al., Effects of Silicon Carbide (SiC) Reinforcementof Japan Rev. 21, 321-325. [3] Lepper K, James M, Chashechkina K
A series of sintered shapes of silicon carbide of high strength comprising 0.027 to 11.300 atomic percent of one or more members of rare earth oxides
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A manufacturing method of a silicon carbide-based honeycomb structure, including a firing step of introducing extruded honeycomb formed bodies containing a
The lattice thermal conductivity of cubic silicon carbide is evaluated by means of a microscopic model considering the discrete nature of the
We have demonstrated that hexagonal silicon carbide junction isolation electrode devices have a much higher forward bias turn-on potential than Si (2.3 V
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Mirror Etching of Single Crystalline C-Face 4H-Silicon Carbide Wafer by Advanced Industrial Science and Technology, Onogawa Tsukuba 305-8569, Japan
SILICON CARBIDE 1. Introduction Silicon carbide [Japan Mexico Norway Venezuela Other countries World180–190. S. Plenok Mater. 93. J. Gac
Pure silicon carbide can be made by the Lely process,[19] in which SiC powder is sublimed into high-temperature specie
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Matetial: Rubber + silicon carbideUsage: ElectricBlack:180GritGreen:240GritBrown:320GritPink:400 Japanese, Korean, Thai, Vietnamese, Arabic,
Kyoto University, JapanSearch for more papers by this author James AFundamentals of Silicon Carbide Technology: Growth, Characterization,
S. Yajima; Y. Hasegawa; J. Hayashi; M. Iimura, 1978: Synthesis of continuous silicon carbide fibre with high tensile strength and high Young's
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