Lattice thermal conductivity in cubic silicon carbide
The lattice thermal conductivity of cubic silicon carbide is evaluated by means of a microscopic model considering the discrete nature of the
The lattice thermal conductivity of cubic silicon carbide is evaluated by means of a microscopic model considering the discrete nature of the
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valent iron was successfully deposited onto the silicon carbide surface. Publisher Name Springer Netherlands Print ISSN 1876-990X Online ISSN
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A series of sintered shapes of silicon carbide of high strength comprising 0.027 to 11.300 atomic percent of one or more members of rare earth oxides
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G. Gurvich, et al., “A system of recording and analyzing the service of silicon carbide electrical heating elements,” Proizvodstvo Ogneuporov, No
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The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition
A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to
you will receive an email with instructions to retrieve your username Silicon carbide films were deposited on silicon substrates maintained at
Get this from a library! Comparison between Silicon-Carbide and diamond for fast neutron detection at room temperature. [ANIMMA 2017 5th International
A silicon carbide semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a semiconductor
Fundamentals of Silicon Carbide Technology: Growth, Characterization, you will receive an email with instructions to retrieve your username
2019420-Get this from a library! A 1 MHz hard-switched silicon carbide DC/DC converter. [18th Annual Applied Power Electronics Conference - APEC 200
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Hot pressed silicon carbide (SiC) composites prepared with 0, 10, 30 or 50 wt% tungsten carbide (WC) are subjected to dry sliding wear
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2019329-Silicon Carbide (SiC), also known as carborundum, has been found to be widely useful as a substrate and wide band gap semiconductor in
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